Patent 11832446 was granted and assigned to United Microelectronics Corporation on November, 2023 by the United States Patent and Trademark Office.
A three-dimensional (3D) memory device includes a channel structure extending along a first direction and a control gate structure extending along a second direction around the channel structure. Preferably, channel structure includes a negative capacitance (NC) insulating layer, a charge trap structure, and a channel layer, in which the NC insulating layer includes HfZrO