US Patent 9837435 Three-dimensional non-volatile memory structure and manufacturing method thereof

A three-dimensional non-volatile memory structure including a substrate, a stacked structure, a charge storage pillar, a channel pillar, and a ferroelectric material pillar is provided. The stacked structure is disposed on the substrate and includes a plurality of conductive layers and a plurality of first dielectric layers, and the conductive layers and the first dielectric layers are alternately stacked. The charge storage pillar is disposed in the stacked structure. The channel pillar is disposed inside the charge storage pillar. The ferroelectric material pillar is disposed inside the channel pillar.