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US Patent 11864368 Static random access memory cell

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 2, 2022
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Date of Patent
January 2, 2024
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Patent Application Number
17830967
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Patent Citations
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US Patent 8059452 Cell structure for dual port SRAM
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US Patent 9577637 Stability-enhanced physically unclonable function circuitry
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US Patent 9590072 Method of forming semiconductor device
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US Patent 9634087 FinFET and fabrication method thereof
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US Patent 9640443 Semiconductor devices and methods of fabricating semiconductor devices
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US Patent 9640540 Structure and method for an SRAM circuit
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US Patent 9761302 Static random access memory cell and manufacturing method thereof
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US Patent 9768178 Semiconductor device, static random access memory cell and manufacturing method of semiconductor device
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US Patent 9799660 Stable and reliable FinFET SRAM with improved beta ratio
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US Patent 9824747 Dual-port static random-access memory cell
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Patent Inventor Names
Ping-Wei Wang
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Kuo-Hung Lo
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Yu-Kuan Lin
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Jordan Hsu
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Chang-Ta Yang
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Shau-Wei Lu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11864368
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Patent Primary Examiner
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Sophia T Nguyen
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CPC Code
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H01L 27/1104
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H01L 27/0922
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H01L 27/0924
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