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US Patent 11881506 Gate structures with air gap isolation features

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Is a

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Johnatan A. Kantarovsky0

Mark D. Levy0

Siva P. Adusumilli0

Brett T. Cucci0

Jeonghyun Hwang0

Date of Patent

January 23, 2024

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Patent Application Number

173860620

Date Filed

July 27, 2021

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Patent Citations

US Patent 7851884 Field-effect transistor, semiconductor chip and semiconductor device

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US Patent 6891235 FET with T-shaped gate

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US Patent 7015116 Stress-relieved shallow trench isolation (STI) structure and method for forming the same

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US Patent 7608497 Passivated tiered gate structure transistor and fabrication method

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US Patent 7622778 Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void

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US Patent 8395217 Isolation in CMOSFET devices utilizing buried air bags

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US Patent 9029831 Light emitting diode and method for manufacturing light emitting diodes

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US Patent 9082749 Semiconductor device and method of manufacturing the semiconductor device

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Patent Primary Examiner

Mouloucoulaye Inoussa

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CPC Code

0

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Patent abstract

The present disclosure relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The structure includes: a gate structure comprising a horizontal portion and a substantially vertical stem portion; and an air gap surrounding the substantially vertical stem portion and having a curved surface under the horizontal portion.

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