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US Patent 11881506 Gate structures with air gap isolation features

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 27, 2021
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Date of Patent
January 23, 2024
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Patent Application Number
17386062
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Patent Citations
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US Patent 7851884 Field-effect transistor, semiconductor chip and semiconductor device
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US Patent 6891235 FET with T-shaped gate
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US Patent 7015116 Stress-relieved shallow trench isolation (STI) structure and method for forming the same
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US Patent 7608497 Passivated tiered gate structure transistor and fabrication method
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US Patent 7622778 Semiconductor device having shallow trench isolation structure comprising an upper trench and a lower trench including a void
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US Patent 8395217 Isolation in CMOSFET devices utilizing buried air bags
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US Patent 9029831 Light emitting diode and method for manufacturing light emitting diodes
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US Patent 9082749 Semiconductor device and method of manufacturing the semiconductor device
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US Patent 9368608 Heterojunction bipolar transistor with improved performance and breakdown voltage
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US Patent 9698245 Vertical transistor with air-gap spacer
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•••
Patent Inventor Names
Johnatan A. Kantarovsky
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Mark D. Levy
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Siva P. Adusumilli
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Brett T. Cucci
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Jeonghyun Hwang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11881506
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Patent Primary Examiner
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Mouloucoulaye Inoussa
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CPC Code
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H01L 29/7786
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H01L 29/2003
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H01L 29/41766
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H01L 21/28587
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H01L 29/42316
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H01L 29/475
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H01L 21/0272
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H01L 29/7783
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H01L 21/823481
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H01L 29/66431
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•••

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