US Patent 11881506 Gate structures with air gap isolation features
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US Patent 11881506 Gate structures with air gap isolation features
Article
Patent abstract
The present disclosure relates to semiconductor structures and, more particularly, to gate structures and methods of manufacture. The structure includes: a gate structure comprising a horizontal portion and a substantially vertical stem portion; and an air gap surrounding the substantially vertical stem portion and having a curved surface under the horizontal portion.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Brett T. Cucci0
Jeonghyun Hwang0
Johnatan A. Kantarovsky0
Mark D. Levy0
Siva P. Adusumilli0
Date of Patent
January 23, 2024
0Patent Application Number
173860620
Date Filed
July 27, 2021
0Patent Citations
Patent Primary Examiner
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