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US Patent 11881530 Spacer structures for semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
January 24, 2022
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Date of Patent
January 23, 2024
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Patent Application Number
17582860
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Patent Citations
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US Patent 10134640 Semiconductor device structure with semiconductor wire
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US Patent 10374059 Structure and formation method of semiconductor device structure with nanowires
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US Patent 10872983 Semiconductor devices and manufacturing methods thereof
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US Patent 11233149 Spacer structures for semiconductor devices
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9601342 FinFETs with strained well regions
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9935016 Silicon and silicon germanium nanowire formation
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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•••
Patent Inventor Names
Song-Bor Lee
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Cheng-Yi Peng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11881530
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Patent Primary Examiner
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David C Spalla
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CPC Code
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H01L 29/66636
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H01L 29/66795
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H01L 29/6681
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H01L 29/775
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H01L 29/7848
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H01L 29/7851
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H01L 29/7853
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H01L 29/7855
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H01L 2029/7858
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H01L 29/785
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•••

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