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US Patent 11882770 Area-selective deposition of metal nitride to fabricate devices

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Patent attributes

Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Rudy J. Wojtecki0

Matthew W. Copel0

Damon Brooks Farmer0

Charles Thomas Rettner0

Alexander Friz0

Noel Arellano0

Date of Patent

January 23, 2024

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Patent Application Number

171181920

Date Filed

December 10, 2020

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Patent Citations

US Patent 9997357 Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors

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US Patent 10658424 Superconducting integrated circuit

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Patent Primary Examiner

Donghai D Nguyen

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CPC Code

0

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Patent abstract

Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.

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