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US Patent 11882770 Area-selective deposition of metal nitride to fabricate devices
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Patent
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Date Filed
December 10, 2020
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Date of Patent
January 23, 2024
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Patent Application Number
17118192
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Patent Citations
US Patent 9997357 Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
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US Patent 10658424 Superconducting integrated circuit
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Patent Inventor Names
Rudy J. Wojtecki
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Matthew W. Copel
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Damon Brooks Farmer
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Charles Thomas Rettner
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Alexander Friz
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Noel Arellano
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11882770
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Patent Primary Examiner
Donghai D Nguyen
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CPC Code
Y10T 29/49014
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C23C 16/34
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C23C 16/04
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C23C 14/0605
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