US Patent 11882770 Area-selective deposition of metal nitride to fabricate devices
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US Patent 11882770 Area-selective deposition of metal nitride to fabricate devices
Article
Patent abstract
Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.
Infobox
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Alexander Friz0
Charles Thomas Rettner0
Damon Brooks Farmer0
Matthew W. Copel0
Noel Arellano0
Rudy J. Wojtecki0
Date of Patent
January 23, 2024
0Patent Application Number
171181920
Date Filed
December 10, 2020
0Patent Citations
Patent Primary Examiner
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