US Patent 11908835 Semiconductor structure and manufacturing method thereof

A method of manufacturing a semiconductor structure includes the following operations. A substrate is provided. A first conductive pillar, a second conductive pillar arid a third conductive pillar are disposed over the substrate. The first conductive pillar comprises a first height, the second conductive pillar comprises a second height, and the third conductive pillar comprises a third height. A first die is disposed over the first conductive pillar. A second die is disposed over the second conductive pillar. A first surface of the first die and a second surface of the second die are at substantially same level.