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US Patent 11914288 Photomask having recessed region

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
August 19, 2021
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Date of Patent
February 27, 2024
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Patent Application Number
17406654
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Patent Citations
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9367655 Topography-aware lithography pattern check
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US Patent 9390217 Methodology of optical proximity correction optimization
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US Patent 7378196 Method of manufacturing mask for correcting optical proximity effect
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US Patent 7563547 Photomask and method of manufacturing the same
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US Patent 8762900 Method for proximity correction
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US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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US Patent 8812999 Method and system of mask data preparation for curvilinear mask patterns for a device
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US Patent 8850366 Method for making a mask by forming a phase bar in an integrated circuit design layout
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US Patent 8906595 Method for improving resist pattern peeling
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•••
Patent Inventor Names
Chi-Hung Liao
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Yu-Yu Chen
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11914288
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Patent Primary Examiner
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Mark F. Huff
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CPC Code
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G03F 1/38
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G03F 1/26
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G03F 1/29
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G03F 1/34
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G03F 1/36
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