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US Patent 11929361 Integrated circuit and manufacturing method thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 26, 2022
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Date of Patent
March 12, 2024
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Patent Application Number
17873935
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Patent Citations
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9406804 FinFETs with contact-all-around
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US Patent 9412817 Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
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US Patent 9412828 Aligned gate-all-around structure
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US Patent 9443769 Wrap-around contact
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US Patent 9472618 Nanowire field effect transistor device having a replacement gate
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US Patent 9502256 ZrAION films
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US Patent 9520482 Method of cutting metal gate
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US Patent 9536738 Vertical gate all around (VGAA) devices and methods of manufacturing the same
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•••
Patent Inventor Names
Chih-Liang Chen
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Li-Chun Tien
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Xin-Yong Wang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11929361
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Patent Primary Examiner
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Tu-Tu V Ho
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CPC Code
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H01L 23/5226
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H01L 21/76816
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H01L 27/0207
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