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US Patent 11937512 Magnetic tunnel junction device with air gap
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Patent
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Date Filed
June 2, 2021
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Date of Patent
March 19, 2024
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Patent Application Number
17303541
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Patent Citations
US Patent 9324937 Thermally assisted MRAM including magnetic tunnel junction and vacuum cavity
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US Patent 9553128 Linear MRAM device with a self-aligned bottom contact
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US Patent 10056543 Magnetoresistive random access memory device having magnetic tunnel junction and method of manufacturing the same
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US Patent 10319783 Integrated magnetic tunnel junction (MTJ) in back end of line (BEOL) interconnects
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US Patent 10347819 Magnetic memory devices having conductive pillar structures including patterning residue components
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US Patent 10573687 Magnetic random access memory with permanent photo-patternable low-K dielectric
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US Patent 10497858 Methods for forming structures for MRAM applications
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US Patent 11676751 Magnetic device
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US Patent 8975089 Method for forming MTJ memory element
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US Patent 9142761 Method for fabricating a magnetic tunnel junction device
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Patent Inventor Names
Nathan P. Marchack
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Pouya Hashemi
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Chandrasekharan Kothandaraman
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11937512
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Patent Primary Examiner
Kevin M Bernatz
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