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US Patent 11937514 High-density memory devices using oxide gap fill

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
May 6, 2021
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Date of Patent
March 19, 2024
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Patent Application Number
17313403
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Patent Citations
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US Patent 9343659 Embedded magnetoresistive random access memory (MRAM) integration with top contacts
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US Patent 9614143 De-integrated trench formation for advanced MRAM integration
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US Patent 10573808 Phase change memory with a dielectric bi-layer
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US Patent 11133178 Seamless gapfill with dielectric ALD films
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US Patent 10692925 Dielectric fill for memory pillar elements
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US Patent 11495532 Techniques to inhibit delamination from flowable gap-fill dielectric
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US Patent 6952030 High-density three-dimensional memory cell
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US Patent 8866242 MTJ structure and integration scheme
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Patent Inventor Names
Theodorus E. Standaert
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Daniel Charles Edelstein
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Chih-Chao Yang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11937514
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Patent Primary Examiner
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Ali Naraghi
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