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US Patent 11942306 Atomic layer etching by electron wavefront

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Date Filed
September 25, 2023
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Date of Patent
March 26, 2024
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Patent Application Number
18474114
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Patent Citations
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US Patent 7431796 Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
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US Patent 7777197 Vacuum reaction chamber with x-lamp heater
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US Patent 9245752 Method for etching atomic layer of graphene
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US Patent 9620382 Reactor for plasma-based atomic layer etching of materials
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US Patent 10368427 Plasmas and methods of using them
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US Patent 10504742 Method of atomic layer etching using hydrogen plasma
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US Patent 11239094 Designer atomic layer etching
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US Patent 11599228 Electronic device including a sensor for an active pen
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US Patent 11664195 DC plasma control for electron enhanced material processing
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US Patent 11688588 Electron bias control signals for electron enhanced material processing
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•••
Patent Citations Received
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US Patent 12125686 Electron bias control signals for electron enhanced material processing
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US Patent 12119205 Atomic layer etching by electron wavefront
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Patent Inventor Names
David Irwin Margolese
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William Andrew Goddard
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Stewart Francis Sando
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Samir John Anz
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11942306
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Patent Primary Examiner
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Stephanie P Duclair
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