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US Patent 11949039 Optoelectronic semiconductor device with nanorod array

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 4, 2019
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Date of Patent
April 2, 2024
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Patent Application Number
17290525
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Patent Citations
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US Patent 7220658 Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
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US Patent 7427555 Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
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US Patent 7670933 Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
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US Patent 8629065 Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
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US Patent 8247887 Method and surface morphology of non-polar gallium nitride containing substrates
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US Patent 9153737 High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof
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US Patent 7091514 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
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US Patent 7186302 Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
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Patent Inventor Names
Jung-Wook Min
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Boon S. Ooi
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Tien Khee Ng
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Aditya Prabaswara
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11949039
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Patent Primary Examiner
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Nduka E Ojeh
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