US Patent 11955483 Semiconductor device and fabrication method thereof
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US Patent 11955483 Semiconductor device and fabrication method thereof
Article
Patent abstract
A semiconductor device and a fabrication method are provided. The semiconductor device includes: a base substrate; a gate structure on the base substrate including a first portion in a first region and a second portion in a second region; and a separation section in the first portion of the gate structure in the first region. A length of the first portion of the gate structure in the first region is larger than a length of the second portion of the gate structure in the second region. A top surface of the separation section is higher than a top surface of the gate structure.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Nan Wang0
Date of Patent
April 9, 2024
0Patent Application Number
172340610
Date Filed
April 19, 2021
0Patent Citations
Patent Primary Examiner
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