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US Patent 11961716 Atomic layer deposition method

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 9, 2021
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Date of Patent
April 16, 2024
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Patent Application Number
17546053
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Patent Citations
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US Patent 10679848 Selective atomic layer deposition with post-dose treatment
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US Patent 9719169 System and apparatus for flowable deposition in semiconductor fabrication
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US Patent 10844486 Semiconductor processing reactor and components thereof
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US Patent 8017182 Method for depositing thin films by mixed pulsed CVD and ALD
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US Patent 9466524 Method of depositing metals using high frequency plasma
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Patent Inventor Names
Hsuan-Fu Wang
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Ching-Chiun Wang
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Fu-Ching Tung
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11961716
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Patent Primary Examiner
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Bret P Chen
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CPC Code
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C23C 16/45536
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C23C 16/45548
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C23C 16/14
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C23C 16/06
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