US Patent 11973125 Self-aligned uniform bottom spacers for VTFETS

Patent

US Patent 9530866 Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts

US Patent 9570357 Vertical field effect transistors

US Patent 9627511 Vertical transistor having uniform bottom spacers

US Patent 9716170 Reduced capacitance in vertical transistors by preventing excessive overlap between the gate and the source/drain

US Patent 9741626 Vertical transistor with uniform bottom spacer formed by selective oxidation

US Patent 9780208 Method and structure of forming self-aligned RMG gate for VFET

US Patent 10096692 Vertical field effect transistor with reduced parasitic capacitance

US Patent 9799749 Vertical transport FET devices with uniform bottom spacer

US Patent 10263122 Methods, apparatus, and manufacturing system for self-aligned patterning of contacts in a vertical field effect transistor

US Patent 9437503 Vertical FETs with variable bottom spacer recess

United States Patent and Trademark Office

Cuong B Nguyen

H01L 21/823821

H01L 21/845

H01L 27/10879

H01L 27/1211

H01L 27/0886

H01L 2924/13067

H01L 21/823468

H01L 21/823431

H01L 29/6656

H01L 29/41791