Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mukta Ghate Farooq0
Ruilong Xie0
Junli Wang0
Dechao Guo0
Date of Patent
May 14, 2024
0Patent Application Number
173044600
Date Filed
June 22, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device including a hybrid contact scheme for stacked FET is disclosed with integration of a BSPDN. A double-sided (both frontside and backside of the wafer) contact scheme with buried power rail (BPR) and backside power distribution network (BSPDN) provides optimum contact and interconnect. The stacked FET could include, for example, FINFET over FINFET, FINFET over nanosheet, or nanosheet over nanosheet.
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