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US Patent 11990508 Dual step etch-back inner spacer formation

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 18, 2021
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Date of Patent
May 21, 2024
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Patent Application Number
17405455
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Patent Citations
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US Patent 10008583 Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same
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US Patent 10014390 Inner spacer formation for nanosheet field-effect transistors with tall suspensions
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US Patent 10037885 Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer
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US Patent 9461114 Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same
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US Patent 9773886 Nanosheet and nanowire devices having doped internal spacers and methods of manufacturing the same
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US Patent 9954058 Self-aligned air gap spacer for nanosheet CMOS devices
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US Patent 9972542 Hybrid-channel nano-sheet FETs
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Patent Inventor Names
Andrew M. Greene
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Yao Yao
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Veeraraghavan S. Basker
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Ruilong Xie
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11990508
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Patent Primary Examiner
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Moazzam Hossain
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CPC Code
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H01L 29/7848
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H01L 29/785
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H01L 29/78612
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H01L 29/78654
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H01L 21/3142
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H01L 29/6653
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H01L 21/28141
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H01L 21/823468
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H01L 21/823864
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H01L 29/0661
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