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US Patent 11990511 Source/drain device and method of forming thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
August 27, 2021
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Date of Patent
May 21, 2024
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Patent Application Number
17458950
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Patent Citations
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US Patent 8661389 Systems and methods of designing integrated circuits
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9418897 Wrap around silicide for FinFETs
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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US Patent 9576644 Integrated circuit chip having two types of memory cells
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•••
Patent Inventor Names
Yee-Chia Yeo
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Chien-I Kuo
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Li-Li Su
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Wei Hao Lu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11990511
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Patent Primary Examiner
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Theresa T Doan
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CPC Code
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H01L 29/785
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H01L 21/823821
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H01L 29/7851
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H01L 29/0847
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H01L 21/823418
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H01L 21/823431
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H01L 21/823481
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H01L 29/0649
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H01L 29/66795
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