US Patent 11990530 Replacement-channel fabrication of III-V nanosheet devices

Patent

US Patent 9123790 Contact techniques and configurations for reducing parasitic resistance in nanowire transistors

US Patent 9437502 Method to form stacked germanium nanowires and stacked III-V nanowires

US Patent 9659829 Hybrid orientation vertically stacked III-V and Ge gate-all-around CMOS

US Patent 9570551 Replacement III-V or germanium nanowires by unilateral confined epitaxial growth

US Patent 9947804 Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure

US Patent 8679902 Stacked nanowire field effect transistor

US Patent 8765563 Trench confined epitaxially grown device layer(s)

United States Patent and Trademark Office

Omar F Mojaddedi

H01L 29/6653

H01L 29/78696

H01L 29/42392

H01L 29/66522

H01L 21/3065

H01L 21/02609

H01L 21/02546

H01L 21/02532