Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chin-Ta Chen0
Yuan-Hsiang Lung0
Hua-Tai Lin0
Han-Wei Wu0
Date of Patent
May 28, 2024
0Patent Application Number
177139930
Date Filed
April 5, 2022
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device includes forming an underlying structure in a first area and a second area over a substrate. A first layer is formed over the underlying structure. The first layer is removed from the second area while protecting the first layer in the first area. A second layer is formed over the first area and the second area, wherein the second layer has a smaller light transparency than the first layer. The second layer is removed from the first area, and first resist pattern is formed over the first layer in the first area and a second resist pattern over the second layer in the second area.
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