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US Patent 12009177 Detection using semiconductor detector

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
February 9, 2021
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Date of Patent
June 11, 2024
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Patent Application Number
17171939
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Patent Citations
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US Patent 8828625 Extreme ultraviolet lithography mask and multilayer deposition method for fabricating same
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US Patent 8841047 Extreme ultraviolet lithography process and mask
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US Patent 8877409 Reflective mask and method of making same
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US Patent 8945803 Smart subfield method for E-beam lithography
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US Patent 8987689 Efficient scan for E-beam lithography
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US Patent 9093530 Fin structure of FinFET
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US Patent 9184054 Method for integrated circuit patterning
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US Patent 9256123 Method of making an extreme ultraviolet pellicle
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US Patent 9269537 E-beam lithography with alignment gating
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US Patent 9305799 Method and system for E-beam lithography with multi-exposure
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•••
Patent Inventor Names
Chrong-Jung Lin
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Li-Jui Chen
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Chien-Ping Wang
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Chun-Lin Chang
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Burn-Jeng Lin
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Shao-Hua Wang
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Ya-Chin King
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12009177
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Patent Primary Examiner
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David E Smith
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CPC Code
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H01L 31/18
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G03F 7/70616
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G03F 7/7055
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H01L 31/02005
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H01J 37/3002
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H01J 37/304
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G03F 7/70516
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H01L 27/1446
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