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US Patent 12022643 Multi-layer high-k gate dielectric structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 29, 2020
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Date of Patent
June 25, 2024
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Patent Application Number
17036418
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Patent Citations
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy
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US Patent 8963258 FinFET with bottom SiGe layer in source/drain
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US Patent 9093514 Strained and uniform doping technique for FINFETs
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US Patent 9093530 Fin structure of FinFET
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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•••
Patent Inventor Names
Chih-Yu Hsu
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Yu-Chia Liang
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Kuo-Feng Yu
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Kuei-Lun Lin
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Jian-Hao Chen
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Hui-Chi Chen
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Yen-Ming Chen
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Feng-Cheng Yang
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Shan-Mei Liao
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Chia-Wei Chen
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•••
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12022643
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Patent Primary Examiner
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Walter H Swanson
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CPC Code
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H01L 27/1104
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