US Patent 12062726 Semiconductor device
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US Patent 12062726 Semiconductor device
Article
Patent abstract
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage V
Infobox
Is a
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masatoshi Aketa0
Yuta Yokotsuji0
Date of Patent
August 13, 2024
0Patent Application Number
183018990
Date Filed
April 17, 2023
0Patent Citations
Patent Primary Examiner
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