Patent 12068266 was granted and assigned to Raytheon Technologies on August, 2024 by the United States Patent and Trademark Office.
An interconnect layer for an integrated circuit device includes a low radio frequency (RF) loss primary coating that forms a main portion of the interconnect layer, an opening formed in the primary coating, a high aspect ratio patternable secondary coating within the opening, and a via formed in the secondary coating. An aspect ratio of the via is greater than an aspect ratio of the opening.