Patent attributes
A structure includes a first via and a first conductive line embedded in a first dielectric layer and spaced apart from each other by the first dielectric layer. A first metal pattern disposed on the first via and embedded in a second dielectric layer. A first conductive via disposed on the first conductive line and embedded in the second dielectric layer. The first metal pattern and the first conductive via are spaced apart from each other and are located on a first horizontal level, and the first metal pattern has an open ring shape. A second via disposed on the first metal pattern and embedded in a third dielectric layer. An inductor structure including the first via, the first metal pattern, and the second via.