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US Patent 12087845 System and methods of manufacturing semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
April 21, 2021
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Date of Patent
September 10, 2024
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Patent Application Number
17236535
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Patent Citations
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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US Patent 9601342 FinFETs with strained well regions
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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Patent Inventor Names
Yee-Chia Yeo
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Chii-Horng Li
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Chia-Ao Chang
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Pei-Ren Jeng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12087845
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Patent Primary Examiner
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Christine A Enad
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CPC Code
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H01L 21/823431
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H01L 21/67017
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H01L 29/6681
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