US Patent 12119292 Semiconductor device and method of manufacture

A package includes a first layer of molding material, a first metallization layer on the first layer of molding material, a second layer of molding material on the first metallization layer and the first layer of molding material, a second metallization layer on the second layer of molding material, through vias within the second layer of molding material, the through vias extending from the first metallization layer to the second metallization layer, integrated passive devices within the second layer of molding material, a redistribution structure electrically on the second metallization layer and the second layer of molding material, the redistribution structure connected to the through vias and the integrated passive devices, and at least one semiconductor device on the redistribution structure, the at least one semiconductor device connected to the redistribution structure.