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US Patent 12119341 Electrostatic discharge diode having dielectric isolation layer

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
September 27, 2021
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Date of Patent
October 15, 2024
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Patent Application Number
17485961
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Patent Citations
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US Patent 9006087 Diode structure and method for wire-last nanomesh technologies
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US Patent 9012997 Semiconductor device including ESD protection device
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US Patent 9401355 Semiconductor device including a diode arranged in a trench
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US Patent 9431388 Series-connected nanowire structures
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US Patent 9761707 Laterally diffused MOSFET with isolation region
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US Patent 9847391 Stacked nanosheet field-effect transistor with diode isolation
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US Patent 11069784 Semiconductor device and method of manufacture
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US Patent 10504890 High density nanosheet diodes
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US Patent 11764287 Multi-gate transistor structure
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US Patent 7538351 Method for forming an SOI structure with improved carrier mobility and ESD protection
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•••
Patent Inventor Names
Miaomiao Wang
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Jingyun Zhang
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Heng Wu
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Julien Frougier
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Lan Yu
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Veeraraghavan S. Basker
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Huimei Zhou
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Xuefeng Liu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12119341
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Patent Primary Examiner
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Mohammed Shamsuzzaman
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CPC Code
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H01L 29/78618
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H01L 29/78696
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H01L 29/66356
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H01L 29/66439
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H01L 29/7391
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H01L 29/0673
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H01L 29/775
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H01L 29/66545
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H01L 29/66136
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H01L 29/861
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•••

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