US Patent 12130548 Extreme ultraviolet mask with reduced wafer neighboring effect

A reticle is provided. The reticle includes a first reflective multilayer (ML) over a mask substrate and a capping layer over the first reflective ML. The reticle also includes a first absorption layer over the capping layer and a second reflective multilayer (ML) over the first absorption layer. The reticle further includes an etch stop layer over the second reflective ML and a third reflective multilayer (ML) over the etch stop layer. In addition, the reticle includes an absorption film pair over the third reflective ML.