Is a
Patent attributes
Patent Applicant
0
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Robert H. Havemann0
James A. Fair0
Jungwan Sung0
Mary Anne Plano0
Nerissa Taylor0
Sang-Hyeob Lee0
Date of Patent
January 18, 2005
0Patent Application Number
104350100
Date Filed
May 9, 2003
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for creating a refractory metal and refractory metal nitride cap effective for reducing copper electromigration and copper diffusion is described. The method includes depositing a refractory metal nucleation layer and nitriding at least the upper portion of the refractory metal layer to form a refractory metal nitride. Methods to reduce and clean the copper lines before refractory metal deposition are also described. Methods to form a thicker refractory metal layer using bulk deposition are also described.
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