Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Brian S. Doyle0
Suman Datta0
Been-Yih Jin0
Robert Chau0
Date of Patent
March 20, 2007
0Patent Application Number
110391970
Date Filed
January 18, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
An embodiment is a non-planar MOS transistor structure including a strained channel region. The combination of a non-planar MOS transistor structure, and in particular an NMOS tri-gate transistor, with the benefits of a strained channel yields improved transistor drive current, switching speed, and decreased leakage current for a given gate length width versus a non-planar MOS structure with an unstrained channel or planar MOS structure including a strained channel.
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