Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Judy H. Huang0
Ken Vo0
Minh Anh Nguyen0
Sean Cox0
Sunil Shanker0
Wenxian Zhu0
Chi-I Lang0
Date of Patent
May 1, 2007
0Patent Application Number
110823690
Date Filed
March 16, 2005
0Patent Citations Received
Patent Primary Examiner
Patent abstract
Methods of filling gaps on semiconductor substrates with dielectric film are described. The methods reduce or eliminate sidewall deposition and top-hat formation. The methods also reduce or eliminate the need for etch steps during dielectric film deposition. The methods include treating a semiconductor substrate with a hydrogen plasma before depositing dielectric film on the substrate. In some embodiments, the hydrogen treatment is used is conjunction with a high rate deposition process.
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