Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Joong Jeon0
Takashi Whitney Orimoto0
Date of Patent
November 13, 2007
0Patent Application Number
111283920
Date Filed
May 13, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor memory device may include an intergate dielectric layer of high-K dielectric materials interposed between a charge storing layer and a control gate. The high-K materials may be deposited in such a manner that the materials are gradually graded with respect to one another.
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