US Patent 7294547 SONOS memory cell having a graded high-K dielectric
Patent 7294547 was granted and assigned to Advanced Micro Devices on November, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Joong Jeon0
Takashi Whitney Orimoto0
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Patent abstract
A semiconductor memory device may include an intergate dielectric layer of high-K dielectric materials interposed between a charge storing layer and a control gate. The high-K materials may be deposited in such a manner that the materials are gradually graded with respect to one another.
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US Patent 07294547 SONOS memory cell having a graded high-K dielectric US Patent 7294547 SONOS memory cell having a graded high-K dielectric
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Patent Number
072945470
Patent Number
72945470
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
072945470
Date of Patent
November 13, 2007
0Patent Application Number
111283920
Date Filed
May 13, 2005
0Official Website
Patent Primary Examiner
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US Patent 07294547 SONOS memory cell having a graded high-K dielectric
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07294547
Date of patent
November 13, 2007
Patent application number
11128392
Date Filed
May 13, 2005
Patent primary examiner
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