Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Lung Hung0
Tai-Bor Wu0
Date of Patent
December 11, 2007
0Patent Application Number
111508540
Date Filed
June 9, 2005
0Patent Primary Examiner
Patent abstract
A ferroelectric material includes a compound of formula (I):(Pb1−x−zBazAx)(ByZr1−y)O3, (I)wherein 0≦x≦0.1, 0≦y≦0.020, 0.15≦z≦0.35, with the proviso that y≠0 when x=0, and that x≠0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.
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