US Patent 7307304 Ferroelectric materials and ferroelectric memory device made therefrom
Patent 7307304 was granted and assigned to National Tsing Hua University on December, 2007 by the United States Patent and Trademark Office.
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Patent Inventor Names
Cheng-Lung Hung0
Tai-Bor Wu0
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Patent abstract
A ferroelectric material includes a compound of formula (I):(Pb1−x−zBazAx)(ByZr1−y)O3, (I)wherein 0≦x≦0.1, 0≦y≦0.020, 0.15≦z≦0.35, with the proviso that y≠0 when x=0, and that x≠0, when y=0; and wherein A is a first element having a valence number greater than that of Pb, and B is a second element having a valence number greater than that of Zr. A ferroelectric memory device made from the ferroelectric material is also disclosed.
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US Patent 07307304 Ferroelectric materials and ferroelectric memory device made therefrom US Patent 7307304 Ferroelectric materials and ferroelectric memory device made therefrom
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Patent Number
073073040
Patent Number
73073040
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Current Assignee
Patent Jurisdiction
Patent Number
073073040
Date of Patent
December 11, 2007
0Patent Application Number
111508540
Date Filed
June 9, 2005
0Official Website
Patent Primary Examiner
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US Patent 07307304 Ferroelectric materials and ferroelectric memory device made therefrom
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07307304
Date of patent
December 11, 2007
Patent application number
11150854
Date Filed
June 9, 2005
Patent primary examiner
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