Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Dongzhi Chi0
Tek Po Rinus0
Soo Jin Chua0
Date of Patent
February 26, 2008
0Patent Application Number
107997050
Date Filed
March 15, 2004
0Patent Primary Examiner
Patent abstract
A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surface of the substrate, and annealing the alloy and the substrate. The annealing temperature is less than 1000° C. The 3-component metal alloy can include Ni, Ti and Pt.
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