US Patent 7335606 Silicide formed from ternary metal alloy films
Patent 7335606 was granted and assigned to Agency for Science, Technology and Research on February, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Dongzhi Chi0
Soo Jin Chua0
Tek Po Rinus0
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Patent abstract
A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surface of the substrate, and annealing the alloy and the substrate. The annealing temperature is less than 1000° C. The 3-component metal alloy can include Ni, Ti and Pt.
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US Patent 07335606 Silicide formed from ternary metal alloy films US Patent 7335606 Silicide formed from ternary metal alloy films
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Patent Number
073356060
Patent Number
73356060
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Current Assignee
Patent Jurisdiction
Patent Number
073356060
Date of Patent
February 26, 2008
0Patent Application Number
107997050
Date Filed
March 15, 2004
0Official Website
Patent Primary Examiner
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US Patent 07335606 Silicide formed from ternary metal alloy films
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07335606
Date of patent
February 26, 2008
Patent application number
10799705
Date Filed
March 15, 2004
Patent primary examiner
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