Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Bo H. Vanderberg0
Robert D. Rathmell0
Date of Patent
April 22, 2008
0Patent Application Number
112903460
Date Filed
November 30, 2005
0Patent Primary Examiner
Patent abstract
One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.
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