Patent 7364962 was granted and assigned to Advanced Micro Devices on April, 2008 by the United States Patent and Trademark Office.
A method of manufacturing an integrated circuit (IC) can utilize a shallow trench isolation (STI) technique. The shallow trench isolation technique can be used in an IC process. Separate liners for the trench are used for NMOS and PMOS regions. The liners can induce strain in the substrate.