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US Patent 8034705 Method of forming a seam-free tungsten plug

Patent 8034705 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on October, 2011 by the United States Patent and Trademark Office.

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Patent abstract

A plug comprises a first insulating interlayer, a tungsten pattern and a tungsten oxide pattern. The first insulating interlayer has a contact hole formed therethrough on a substrate. The tungsten pattern is formed in the contact hole. The tungsten pattern has a top surface lower than an upper face of the first insulating interlayer. The tungsten oxide pattern is formed in the contact hole and on the tungsten pattern. The tungsten oxide pattern has a level face.

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