US Patent 8034705 Method of forming a seam-free tungsten plug
Patent 8034705 was granted and assigned to SAMSUNG ELECTRONICS CO., LTD. on October, 2011 by the United States Patent and Trademark Office.
All edits
Edits on 28 Nov, 2023
Golden AI
Edits made to:
Article (+481 characters)
Article
Patent abstract
A plug comprises a first insulating interlayer, a tungsten pattern and a tungsten oxide pattern. The first insulating interlayer has a contact hole formed therethrough on a substrate. The tungsten pattern is formed in the contact hole. The tungsten pattern has a top surface lower than an upper face of the first insulating interlayer. The tungsten oxide pattern is formed in the contact hole and on the tungsten pattern. The tungsten oxide pattern has a level face.
Edits on 20 Sep, 2023
Golden AI
Edits made to:
Infobox (+4 properties)
Infobox
Patent Inventor Names
Chang-Ki Hong0
Ju-Young Jung0
Suk-Hun Choi0
Yoon-Ho Son0
Edits on 19 Jul, 2023
Golden AI
Edits made to:
Infobox (+1 properties)
Infobox
Patent Citations Received
Edits on 18 May, 2023
Golden AI
Edits made to:
Infobox (+1/-1 properties)
US Patent 08034705 Method of forming a seam-free tungsten plug US Patent 8034705 Method of forming a seam-free tungsten plug
Infobox
Patent Number
080347050
Patent Number
80347050
Edits on 7 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
080347050
Date of Patent
October 11, 2011
0Patent Application Number
124603180
Date Filed
July 16, 2009
0Patent Primary Examiner
Edits on 14 Dec, 2021
Golden AI
Edits made to:
Infobox (+8 properties)
US Patent 08034705 Method of forming a seam-free tungsten plug
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
08034705
Date of patent
October 11, 2011
Patent application number
12460318
Date Filed
July 16, 2009
Patent primary examiner
Find more entities like US Patent 8034705 Method of forming a seam-free tungsten plug
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
