US Patent 8361900 Barrier layer for copper interconnect
Patent 8361900 was granted and assigned to Taiwan Semiconductor Manufacturing Company on January, 2013 by the United States Patent and Trademark Office.
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Patent abstract
A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.
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Patent Inventor Names
Ching-Hua Hsieh0
Chung-Chi Ko0
Han-Hsin Kuo0
Shing-Chyang Pan0
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Patent Citations Received
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US Patent 08361900 Barrier layer for copper interconnect US Patent 8361900 Barrier layer for copper interconnect
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Patent Number
08361900
Patent Number
8361900
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US Patent 08361900 Barrier layer for copper interconnect
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Is a
Current assignee
Patent jurisdiction
Patent number
08361900
Date of patent
January 29, 2013
Patent application number
12761805
Date Filed
April 16, 2010
Patent primary examiner
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