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US Patent 8741551 Method and composition of a dual sensitive resist

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Patent Citations Received
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US Patent 12009202 Using a self-assembly layer to facilitate selective formation of an etching stop layer
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Patent abstract

The present disclosure provides a sensitive material. The sensitive material includes a polymer that turns soluble to a base solution in response to reaction with acid; a plurality of photo-base generators (PBGs) that decompose to form base in response to radiation energy; and a thermal sensitive component that generates acid in response to thermal energy.

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US Patent 11822251 Photoresist with polar-acid-labile-group
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Patent Inventor Names
Chen-Hau Wu0
Ching-Yu Chang0
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US Patent 11762296 Method and apparatus of patterning a semiconductor device
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US Patent 11664237 Semiconductor device having improved overlay shift tolerance
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US Patent 08741551 Method and composition of a dual sensitive resist US Patent 8741551 Method and composition of a dual sensitive resist

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Patent Number
087415510
Patent Number
87415510
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=087415510
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Infobox
Is a
Patent
Patent
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
087415510
Date of Patent
June 3, 2014
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Patent Application Number
134426870
Date Filed
April 9, 2012
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=087415510
Patent Primary Examiner
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Caleen Sullivan
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=08741551
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 US Patent 08741551 Method and composition of a dual sensitive resist

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
08741551
Date of patent
June 3, 2014
Patent application number
13442687
Date Filed
April 9, 2012
Patent primary examiner
‌
Caleen Sullivan

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