Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Hsien Wu0
Chih-Hsin Ko0
Yi-Jing Lee0
You-Ru Lin0
Cheng-Tien Wan0
Date of Patent
June 3, 2014
Patent Application Number
13410073
Date Filed
March 1, 2012
Patent Citations Received
0
0
Patent Primary Examiner
Patent abstract
A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.
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